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MITSUBISHI SEMICONDUCTOR
MGF431xG
Super Low Noise InGaAs HEMT
DESCRIPTION
The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.
OUTLINE DRAWING
FEATURES
Low noise figure @ f=12GHz MGF4316G : NF min.=0.80dB (MAX.) MGF4319G : NF min.=0.50dB (MAX.) High associated gain Gs=12.0 dB (MIN.) @ f=12GHz
APPLICATION
L to K band low noise amplifiers.
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA Refer to Bias Procedure
GD-4
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature
( Ta=25C ) Ratings -4 -4 60 50 125 -65 ~ +125 Unit
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
V V mA mW C C
making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
Symbol V(BR)GDO IGSS IDSS VGS (off) gm Gs NFmin Rth (ch-a) Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to Source cut-off voltage Transconductance Associated gain Minimum noise figure Thermal resistance
*1
( Ta=25C ) Test conditions IG= -10A VGS= -2V, VDS=0V VGS=0V, VDS=2V VDS=2V, ID=500A VDS=2V, ID=10mA VDS=2V, ID=10mA, f=12GHz VDS=2V, ID=10mA, f=12GHz MGF4316G MGF4319G Vf method Limits Min. -3 -- 15 -0.1 -- 12 -- -- -- Typ. -- -- -- -- 75 13.5 -- -- 625 Max -- 50 60 -1.5 -- -- 0.8 0.5 -- Unit V A mA V mS dB dB C/W
*1 : Channel to ambient
MITSUBISHI ELECTRIC
as of Apr.'98
MITSUBISHI SEMICONDUCTOR
MGF431xG
Super Low Noise InGaAs HEMT
Typical Characteristics
MITSUBISHI ELECTRIC
as of Apr.'98
MITSUBISHI SEMICONDUCTOR
MGF431xG
Super Low Noise InGaAs HEMT
Typical Characteristics S Parameters (Ta=25C , VDS=2V , ID=10mA )
f (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Magn. 0.990 0.967 0.925 0.874 0.831 0.783 0.743 0.706 0.682 0.670 0.639 0.617 0.591 0.571 0.565 0.560 0.533 0.484 S11 Angle -22.3 -40.6 -53.2 -70.9 -88.8 -105.7 -120.6 -132.1 -144.7 -159.1 -171.8 175.3 163.1 152.9 140.1 125.8 109.8 91.2 Magn. 5.775 5.585 5.401 5.161 4.899 4.626 4.316 4.100 3.887 3.765 3.617 3.526 3.421 3.349 3.333 3.349 3.356 3.337 S21 Angle 158.1 140.6 128.9 111.8 96.8 80.8 67.9 56.4 43.2 30.1 17.5 4.5 -8.1 -17.4 -29.6 -44.4 -59.9 -77.0 Magn. 0.020 0.035 0.051 0.064 0.075 0.083 0.087 0.090 0.093 0.094 0.095 0.096 0.094 0.094 0.096 0.098 0.101 0.104 S12 Angle 71.9 61.8 53.3 42.4 29.3 19.0 9.1 4.1 -6.4 -14.3 -24.4 -33.5 -42.5 -50.9 -61.1 -74.1 -88.8 -105.1 Magn. 0.533 0.514 0.489 0.457 0.424 0.391 0.369 0.357 0.357 0.351 0.339 0.329 0.328 0.328 0.343 0.351 0.337 0.310 S22 Angle -19.2 -33.4 -42.9 -58.2 -71.6 -87.5 -100.6 -110.8 -122.3 -133.0 -143.5 -154.0 -163.9 -171.3 179.5 170.5 161.8 151.6 MSG/MAG (dB) 28.8 26.5 24.3 21.6 19.8 18.1 16.8 15.9 15.1 14.7 14.0 13.5 13.0 12.7 12.7 12.7 12.5 12.1 0.10 0.19 0.27 0.35 0.43 0.50 0.57 0.64 0.69 0.72 0.80 0.86 0.91 0.95 0.96 0.98 1.01 1.11 K
Noise Parameters (Ta=25C , VDS=2V , ID=10mA )
f (GHz) 4 8 12 14 18 G opt. Magn. 0.76 0.59 0.48 0.41 0.34 Angle 49 95 139 166 -142 Rn () 12.5 4.7 2.3 1.8 1.5 NFmin.(dB) MGF4316G MGF4319G 0.31 0.47 0.60 0.69 0.88 0.24 0.35 0.45 0.50 0.61 Gs (dB) 18.3 15.9 13.5 12.3 9.9
MITSUBISHI ELECTRIC
as of Apr.'98

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